savantic semiconductor product specification silicon npn power transistors 2SD2148 d escription with to-3pfm package high voltage ,high speed low collector saturation voltage applications high speed switching power supply output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 16 a i b base current 4 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pfm) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD2148 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma , i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =1ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =7a ;i b =1.4a 5.0 v v besat base-emitter saturation voltage i c =7a ;i b =1.4a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =5v 8 h fe-2 dc current gain i c =7a ; v ce =5v 4 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SD2148 package outline fig.2 outline dimensions downloaded from: http:///
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